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M31 28nm HV Process for OLED Display Driver IC




Overview


In the field of smartphone applications, the high performance of displays with faster, brighter, clearer, and higher frame rate, are rapidly developed and well adopted. Therefore, the future trend is to switch from LCD to low power and high performance OLED displays.

From the perspective of wafer manufacturing process, the mainstream OLED driver chips were designed in 40nm. Due to needs of more complex color processing and Demura uniform compensation, OLED Driver IC requires larger SRAM as storage for more complex algorithms. The introduction of the 28nm high voltage process, along with M31 optimized Standard Cell and High-Density SRAM, not only significantly increased computing power but also reduced the die size.

High-resolution display and high data transfer rates drive the growth of Display Driver IC market, which strongly demand for high-voltage process in further advanced deep-submicron process technology. M31 provides 28nm high voltage (HV) Foundation IP, including Standard Cell, SRAM Compiler, and GPIO solutions. The IP solutions contain various low power and power-saving design kits, high ESD protection GPIO, and high density SRAM memories which are optimized with the Monte Carlo method and used to drive high quality display graphics panel. Overall, these IP solutions help to reduce power consumption and to optimize area of a Display Driver IC which are designed for TVs, smartphones, tablets, smart watches, and other portable electronics.

Currently, M31 has the solutions for both TSMC and Globalfoundries 28HV technology platforms.